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3寸单抛硅片参数及其规格
生长方式: CZ
直径: 76.2+/-0.2mm
型号/掺杂：P/B, N/Ph, N/As, N/Sb
晶向: <100>, <111>, <110> +/-0.5度
电阻率: 0.0001-100 (Ω·cm)
氧含量范围: 12-19 (ppm(New ASTM))
碳含量:≤3×10 16（atoms/cm3）
厚度: 380+/-25um
总厚度变化TTV: < 10(μm)
注:具体规格请对照下表, 下单或询价时请告知产品号，加黑部分为推荐产品，如你对电阻率不要求可以考虑购买此项。
| 电阻 | 其它指标 | |
| SICB12-3380S | 10-100 ohm-cm | CZ单晶硅片,P/B,<100>,单抛, 3",380um厚 |
| SICB11-3380S | 1-10 ohm-cm | |
| SICB1-2-3380S | 0.01-0.1 ohm-cm | |
| SICB1-3-3380S | 0.001-0.01ohm-cm | |
| SICB1-33-3380S | 0-100 ohm-cm | |
| SICP12-3380S | 10-100 ohm-cm | CZ单晶硅片,N/, <100>, 单抛, 3", 380um厚 |
| SICP11-3380S | 1-10 ohm-cm | |
| SICP1-2-3380S | 0.01-0.1 ohm-cm | |
| SICP1-3-3380S | 0.001-0.1 ohm-cm | |
| SICP1-33-3380S | 0-100 ohm-cm | |
| SICB22-3380S | 10-100 ohm-cm | CZ单晶硅片,P/B,<1>,单抛, 3",380um厚 |
| SICB21-3380S | 1-10 ohm-cm | |
| SICB2-2-3380S | 0.01-0.1 ohm-cm | |
| SICB2-33-3380S | 0-100 ohm-cm | |
| SICP22-3380S | 10-100 ohm-cm | CZ单晶硅片,N/Ph,<1>,单抛, 3",380um厚 |
| SICP21-3380S | 1-10 ohm-cm | |
| SICP2-2-3380S | 0.01-0.1 ohm-cm | |
| SICP2-33-3380S | 0-100 ohm-cm | |
| SICA1-3-3380S | 0.001-0.005 ohm-cm | CZ单晶硅片,N/, <100>, 单抛, 3", 380um厚 |
| SICA2-3-3380S | 0.001-0.005 ohm-cm | CZ单晶硅片,N/, <111>, 单抛, 3", 380um厚 |
| SICS1-2-3380S | 0.01-0.02 ohm-cm | CZ单晶硅片,N/, <100>, 单抛, 3", 380um厚 |
| SICS2-2-3380S | 0.01-0.02 ohm-cm | CZ单晶硅片,N/, <111>, 单抛, 3", 380um厚 |
| SICB31-3380S | 1-10 OHM-CM | CZ单晶硅片,P/B, <110>, 单抛, 3", 380um厚 |
| SICP31-3380S | 1-10 OHM-CM | CZ单晶硅片,N/, <110>, 单抛, 3", 380um厚 |
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